• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode device and a display using the same, and has an object of providing a light emitting diode device having excellent color rendering and easy to manufacture a driving circuit. To this end, red, green, and blue light emitting diode devices are fabricated using red, green, and blue phosphors, and displays are manufactured using such light emitting diode devices. In the light emitting diode device according to the present invention, there is a light emitting diode, and the phosphor absorbs the light emitted from the light emitting diode to emit light having a predetermined wavelength, and the light emitting diode and the phosphor are molded by the resin. Further, the display according to the present invention is manufactured using such a light emitting diode device.
    公开号:KR20030060281A
    申请号:KR1020020000906
    申请日:2002-01-08
    公开日:2003-07-16
    发明作者:유순재；김돈수；서종욱；최용석；노승정
    申请人:주식회사 이츠웰；
    IPC主号:
    专利说明:

    Light emitting diode device and display using the same {LIGHT EMITTING DEVICE AND DISPLAY USING THE DEVICE}
    [11] The present invention relates to a light emitting diode device and a display using the same.
    [12] A light emitting diode is a PN junction diode of a compound semiconductor, and emits light when a voltage is applied. That is, it is a device that generates a minority carrier (electrons or holes) by applying a voltage to the junction structure of the semiconductor, and emits light through these combinations.
    [13] Conventional light emitting diode lamps use the energy bandgap of the semiconductor material or the width of the quantum well structure in the light emitting portion of the light emitting diode to adjust the energy and color of light emitted. In addition, the display device using the light emitting diode fabricates a pixel based on the light emitting diode element having a basic color of red, green, and blue, and implements a desired color using the overlapping colors.
    [14] However, this method has a difficulty in precisely adjusting the composition of the semiconductor material or the width of the quantum well in order to adjust the color of the red, green, and blue LED lamps. In addition, the light output characteristics with time are different depending on the structure of the semiconductor material and the quantum well, and their lifetime and time characteristics are different. Therefore, after a certain time, the wavelength distribution is different from the first time, resulting in a difference in color balance. In addition, even when the display is manufactured, the respective driving voltages for the red pixel, the green pixel, and the blue pixel are different, which causes complexity of circuit fabrication.
    [15] The present invention is to provide a light emitting diode device excellent in color rendering.
    [16] In addition, the present invention is to provide a display that is easy to manufacture a drive circuit.
    [1] 1 is a schematic cross-sectional view of a light emitting diode chip used in the present invention,
    [2] 2 is a schematic cross-sectional view of a light emitting diode device according to an embodiment of the present invention;
    [3] FIG. 3 is a diagram for explaining conversion of wavelengths emitted from light emitting diodes by red, green, and blue phosphors into red, green, or blue wavelengths, respectively.
    [4] 4 is an SEM photograph of a red phosphor used in the present invention.
    [5] 5 and 6 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the red phosphor used in the present invention, respectively,
    [6] 7 is an SEM photograph of the green phosphor used in the present invention.
    [7] 8 and 9 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the green phosphor used in the present invention, respectively,
    [8] 10 is an SEM photograph of a blue phosphor used in the present invention.
    [9] 11 and 12 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the blue phosphor used in the present invention, respectively,
    [10] 13 schematically illustrates a configuration diagram of one pixel in a display according to an embodiment of the present invention.
    [17] In order to solve the technical problem, the present invention manufactures red, green, and blue light emitting diode devices using red, green, and blue phosphors, and manufactures a display using such light emitting diode devices.
    [18] Specifically, the light emitting diode device according to the present invention includes a light emitting diode, and the phosphor absorbs the light emitted from the light emitting diode to emit light having a predetermined wavelength, and the resin and the light emitting diode and the phosphor are molded.
    [19] Here, the phosphor may be a red phosphor, a green phosphor, a blue phosphor, or a phosphor made by mixing at least two of these phosphors. At this time, the red phosphor is composed of K (WO 4 ) 1.25 : Eu, Sm series, the green phosphor is composed of (BaSr) 2 SiO 4 : Eu series, and the blue phosphor is (SrMg) 5 (PO 4 ) 3 Cl: Eu series.
    [20] Here, the light emitted by the light emitting diode preferably has a wavelength in the 350 to 415 nm band.
    [21] In addition, the display according to the present invention has a light emitting diode, and the phosphor absorbs the light emitted from the light emitting diode to emit light having a wavelength of the first band, and the first light emitting diode in which the resin molds the light emitting diode and the phosphor. It is manufactured using the device. Here, a second light emitting diode device comprising a light emitting diode, a phosphor that absorbs light emitted from the light emitting diode and emits light having a wavelength of a second band, a light emitting diode, and a resin for molding the phosphor; The apparatus may further include a third light emitting diode device including a phosphor, a light emitting diode, and a resin molding the phosphor, the light emitting diode having a wavelength of a third band by absorbing the emitted light.
    [22] Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
    [23] 1 illustrates a cross-sectional structure of a light emitting diode chip used in a light emitting diode device according to a first embodiment of the present invention.
    [24] A buffer layer 20 made of GaN, an electron generating layer 30 made of N-type GaN, an active layer 40 made of InGaN, and P on a crystal growth substrate 10 made of aluminum oxide (Al 2 O 3 ) known as sapphire The P-type cladding layer 50 made of type AlGaN and the hole generating layer 60 made of P-type GaN are sequentially formed.
    [25] Each layer 20, 30, 40, 50, 60 in this multilayer structure is formed through epitaxial growth on the substrate 10 of crystal growth composed of sapphire.
    [26] Here, the type of substrate 10 for crystal growth is selected as appropriate according to the material properties of the subsequent layers 20, 30, 40, 50, 60 to be formed by epitaxial growth. For example, when growing GaN-based semiconductor layers 20, 30, 40, 50, 60, as in this embodiment, it is appropriate to use a sapphire substrate as the substrate 10 for crystal growth.
    [27] At this time, the buffer layer 20 serves to reduce the lattice mismatch between the substrate 10 and the subsequent layers 30, 40, 50, 60 during crystal growth.
    [28] The transparent electrode layer 70 having a double layer structure of Ni / Au is formed on the hole generating layer 60. The P-type pad 81 is in contact with the transparent electrode layer 70, and the N-type pad 82 is in contact with the electron generating layer 70.
    [29] Here, the P-type pad 81 may be formed in a stacked structure of Ti / Au, and the N-type pad 82 may be formed in a stacked structure of Ti / Al.
    [30] The voltage required to generate holes in the hole generation layer 60 is applied to the P-type pad 81, and the voltage required to generate electrons in the electron generation layer 30 is applied to the N-type pad 82.
    [31] Here, the transparent electrode layer 70 plays a role of evenly applying the voltage input through the P-type pad 81 to the hole generating layer 60.
    [32] As mentioned, the active layer 40 is formed of InGaN, and the band gap and quantum well of 3.06 eV are made by using 1.9 eV of InN and 3.4 eV of GaN. It produces a light emission wavelength around 405nm.
    [33] Here, the emission wavelength generated by the combination of electrons and holes varies according to the type of material constituting the active layer 40. Therefore, it is preferable to form a light emitting diode chip by adjusting the semiconductor material constituting the active layer 40 according to which band wavelength is used.
    [34] The structure of the light emitting diode chip is only an embodiment, and may be variously changed based on a PN junction according to which light emitting diode device is to be manufactured.
    [35] 2 is a schematic cross-sectional view of a light emitting diode device according to a first embodiment of the present invention.
    [36] Light emission on the lead frame 100 including the first body 101 having the recessed cup-shaped depression 103 formed therein and the second body 102 positioned at a predetermined distance from the first body 101. The diode chip C is bonded.
    [37] Here, the LED chip (C) is die bonded to the recess 103 of the lead frame 100, one of the P-type pad and the N-type pad of the light emitting diode chip (C) is the lead frame 100 The wire is bonded to the first body 101, the other pad is wire bonded to the second body 102 of the lead frame 100. Reference numerals 201 and 202 denote wires, and in general, those formed of Au series having excellent malleability, ductility, and conductivity are used.
    [38] When a current flows from the P-type pad to the N-type pad in the light emitting diode chip C, electrons and holes in the active layer combine to emit light. In the case of the light emitting diode chip described with reference to FIG. 1, since the active layer is formed of InGaN, purple light is emitted.
    [39] In the depression 103 of the lead frame 100 to which the light emitting diode chip C is bonded, a mixture 200 of a red phosphor, a green phosphor, or a blue phosphor, or a phosphor and an epoxy resin in which they are mixed in an appropriate ratio is formed. It is filled.
    [40] To this end, during the fabrication of the LED device, the mixture 200 of the phosphor and the epoxy resin is applied to the depression 103 of the lead frame 100 and then cured. Here, the depth and width of the depression 103 of the lead frame 100 can be variously adjusted according to the amount of the phosphor to be applied.
    [41] The epoxy lens 300 made of an epoxy resin seals the mixture 200 of the phosphor and the epoxy resin filling the recess 103 of the LED chip C and the lead frame 100. The epoxy lens 300 collects light emitted through the phosphor at a desired angle. Here, the epoxy lens 300 may be formed in a lamp shape, as shown in Figure 2, in addition to the desired various forms can be manufactured.
    [42] In such a light emitting diode device, when a predetermined voltage is applied to the light emitting diode chip C, the light emitting diode chip C emits a predetermined wavelength band. All of these wavelengths are absorbed by the phosphor 200 and used to excite the phosphor 200, and emit red, green, or blue wavelengths depending on the type of the phosphor 200, respectively.
    [43] As shown in FIG. 3, the role of each phosphor in the present invention serves to change the wavelength and energy emitted from the light emitting diodes into red, green, or blue wavelengths and energy. For this purpose, since each phosphor must absorb all the energy emitted from the light emitting diode, it is necessary to appropriately adjust the concentration of the phosphor.
    [44] As described above, the present invention manufactures a light emitting diode device that emits a single color using phosphors. The light emitting diode device in the present invention uses the light output from the light emitting diode only to excite the phosphor and eventually uses the light emitting from the phosphor.
    [45] In the light emitting diode device according to the present invention, description of each phosphor is as follows.
    [46] The red phosphor in the present invention is composed of, for example, K (WO 4 ) 1.25 : Eu, Sm. K (WO 4 ) 1.25 acts as the parent of the phosphor and Eu, Sm is the doping material. The emission peak of the red phosphor can be controlled by adjusting the concentration of the doping material.
    [47] 4 shows an SEM photograph of this red phosphor. 5 and 6 show the excitation intensity and the emission intensity according to the wavelength of the red phosphor as graphs, respectively. As shown in FIG. 5 and FIG. 6, energy of 350 to 415 nm may be used as an excitation light source of such a red phosphor. Therefore, a red light emitting diode device can be manufactured using such a red phosphor and all light emitting diodes emitting a light emission wavelength of 350 to 415 nm.
    [48] The green phosphor in the present invention is composed of, for example, (BaSr) 2 SiO 4 : Eu. Likewise, (BaSr) 2 SiO 4 acts as a parent and Eu is a doping material. The emission peak of the green phosphor can be controlled by adjusting the concentration of the doping material.
    [49] 7 shows an SEM photograph of this green phosphor. 8 and 9 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the green phosphor, respectively. As an excitation light source of such a green phosphor, energy of 200 to 415 nm can be used. Therefore, a green light emitting diode device can be manufactured using such a green phosphor and all light emitting diodes emitting a light emission wavelength of 200 to 415 nm.
    [50] The blue phosphor in the present invention is composed of, for example, (SrMg) 10 (PO 4 ) 6 Cl 2 : Eu. Likewise, (SrMg) 10 (PO 4 ) 6 Cl 2 acts as a parent and Eu is a doping material. The emission peak of the blue phosphor can be controlled by adjusting the concentration of the doping material.
    [51] 10 shows an SEM photograph of such a blue phosphor. 11 and 12 are graphs showing the excitation intensity and the emission intensity according to the wavelength of the blue phosphor, respectively. Energy of 200-415 nm can be used as an excitation light source of such a blue phosphor. Therefore, a green light emitting diode device can be manufactured using such a blue phosphor and all light emitting diodes emitting a light emission wavelength of 200 to 415 nm.
    [52] Since the above-mentioned red phosphor, green phosphor, and blue phosphor can all be excited at 350 to 415 nm, the phosphor in which these are physically mixed can also use this band as an excitation light source. Accordingly, the combination of these phosphors, which are the three primary colors of light, enables the production of phosphors capable of exhibiting all colors, and the manufacture of fluorescent light emitting diode lamps capable of exhibiting all colors.
    [53] In the white fluorescent light emitting diode device according to the present invention, since the half width and the wavelength can be shifted by controlling the doping material, the red, green, and blue phosphors can obtain light almost similar to natural light. This is excellent in color reproduction as compared with a specific color using only the semiconductor material of the conventional light emitting diode, and it is possible to increase the efficiency in manufacturing since it is not greatly affected by the minute differences in the characteristics of the semiconductor material. In addition, since it has a light characteristic almost similar to natural light, it is possible to minimize the damage of the primary color to be represented as an illumination and backlight light source.
    [54] In addition, since the LED device according to the present invention adjusts the color characteristics according to the material constituting the phosphor, it is not significantly affected by the minute differences in the LED chip characteristics, thereby increasing efficiency in manufacturing the LED device.
    [55] 14 schematically illustrates a configuration of one pixel in a display according to an exemplary embodiment of the present invention.
    [56] A red lamp 1, a green lamp 2, and a blue lamp 3 are fabricated using the light emitting diode device as described above, and a combination thereof constitutes a pixel that is a pixel of a large display. A group of pixels produced using such unit pixels constitutes a module to represent a letter or a number. In addition, a group of modules produced using such a unit module constitutes a display. The display manufactured in this way can implement a full color that can represent all colors through the combination of the red lamp 1, the green lamp 2, and the blue lamp 3.
    [57] In the display according to the present invention, since each light emitting diode lamp uses the same semiconductor material, the driving voltages can be made identical to each other without distinguishing red, green, and blue. In addition, the light emission output according to the time of each phosphor in each light emitting diode lamp is the same, it is possible to prevent the color change differently after a certain time. In this way, since the driving voltage of the light emitting diode lamp is the same regardless of the color, the constituent circuit of the display can be easily manufactured. In addition, the time-output characteristics are similar regardless of the color, so there is no fear that the balance of color will be broken even after time passes.
    [58] In addition to the configuration as shown in FIG. 14, the present invention can produce various types of pixels according to the size, resolution, and type of the module and the display.
    [59] As described above, the fluorescent light emitting diode lamp can be applied to a mono display, and in this case, a display having a color having an overlapping wavelength can be provided instead of a short wavelength. The lamps used herein may be constituted by fluorescent light emitting diode lamps in which the red, green, and blue phosphors described above are mixed and coated at an appropriate ratio.
    [60] In addition, since any color lamp can be implemented, any color of the guiding mono display that can be seen in the subway can be implemented.
    [61] The fluorescent light emitting diode lamp and the display using the same of the present invention can realize all index colors using only phosphors without using semiconductor materials and structures (bandgap size, quantum well depth and width). In addition, since the half width can be changed by adjusting the doping material of the phosphor, excellent color reproducibility can be achieved and color close to natural color can be obtained. In addition, since the driving voltage of the LED lamp is the same regardless of the color, the constituent circuit of the display can be easily manufactured.
    权利要求:
    Claims (6)
    [1" claim-type="Currently amended] Light emitting diode,
    A phosphor that absorbs light emitted from the light emitting diode and emits light having a predetermined wavelength;
    Resin molding the light emitting diode and the phosphor
    Light emitting diode device comprising a.
    [2" claim-type="Currently amended] In claim 1,
    The phosphor is a red phosphor, a green phosphor, a blue phosphor, or a phosphor made by mixing at least two of these phosphors.
    [3" claim-type="Currently amended] In claim 2,
    The red phosphor is composed of K (WO 4 ) 1.25 : Eu, Sm series,
    The green phosphor is composed of (BaSr) 2 SiO 4 : Eu series,
    The blue phosphor comprises (SrMg) 5 (PO 4 ) 3 Cl: Eu series.
    [4" claim-type="Currently amended] In claim 1,
    The light emitting diode device emitting light emitting wavelength of 300 ~ 415nm.
    [5" claim-type="Currently amended] A display fabricated using a first light emitting diode device comprising a light emitting diode, a phosphor that absorbs light emitted from the light emitting diode and emits light having a wavelength of a first band, the light emitting diode, and a resin molding the phosphor.
    [6" claim-type="Currently amended] In claim 5,
    A second light emitting diode device comprising a light emitting diode, a phosphor absorbing light emitted from the light emitting diode and emitting light having a wavelength of a second band, the light emitting diode and a resin molding the phosphor;
    A third light emitting diode device comprising a light emitting diode, a phosphor that absorbs light emitted from the light emitting diode and emits light having a wavelength of a third band, the light emitting diode, and a resin molding the phosphor.
    Display further including.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2002-01-08|Application filed by 주식회사 이츠웰
    2002-01-08|Priority to KR1020020000906A
    2003-07-16|Publication of KR20030060281A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020020000906A|KR20030060281A|2002-01-08|2002-01-08|Light emitting device and display using the device|
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